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| SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 4 JANUARY 1996 7 FEATURES: * High VCEO=300V and low VCE(sat) APPLICATIONS: * Suitable for video output stages in TV sets * Switching power supplies COMPLEMENTARY TYPE:PARTMARKING DETAIL:BFN38 BFN39 BFN39 C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb =25C Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) 25 40 30 100 2.5 MHz pF MIN. -300 -300 -5 -100 -20 -100 -0.5 -0.9 SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg TYP. MAX. UNIT V V V nA VALUE -300 -300 -5 -500 -2 -55 to +150 CONDITIONS. IC=-100A IC=-1mA IE=-100A VCB=-250V VCB=-250V VEB=-4V IC=-20mA, IB=-2mA* IC=-20mA, IB=-2mA* IC=-1mA, VCE=-10V* IC=-10mA, VCE=-10V* IC=-30mA, VCE=10V* IC=-20mA, VCE=-10V f=100MHz VCB=-30V, f=1MHz UNIT V V V mA W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). A nA V V Static Forward hFE Current Transfer Ratio Transition Frequency Output Capacitance fT Cobo Tamb =150C *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% For typical characteristics graphs see FMMTA92 datasheet. 3 - 49 |
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